Antimony Diffusion in CdTe
Antimony Diffusion in CdTe
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DOI：
10.1109/jphotov.2017.2655033
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发表时间：
2017-05-01
影响因子：
3
通讯作者：
Metzger, Wyatt K.
中科院分区：
文献类型：
--
作者：
Colegrove, Eric;Harvey, Steven P.;Metzger, Wyatt K.
V族掺杂剂可用于下一代高电压碲化镉（CdTe）太阳能光伏器件，但需要了解基本的缺陷能量学和动力学。在这里，锑（Sb）的扩散研究在单晶和多晶CdTe富镉条件下。动态二次离子质谱法和分析体和晶界扩散模型的扩散分布确定。发现了缓慢的体扩散和快速的晶界扩散，用密度泛函理论来理解形成能和机制。理论和实验结果对CdTe中V族缺陷动力学有了新的认识。
Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. The theory and experimental results create new understanding of group V defect kinetics in CdTe.