Nano-tesla magnetic field magnetometry using an InGaAs-AlGaAs-GaAs 2DEG Hall sensor
Nano-tesla magnetic field magnetometry using an InGaAs-AlGaAs-GaAs 2DEG Hall sensor
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DOI：
10.1016/s0924-4247(02)00386-2
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发表时间：
2003-01-01
影响因子：
4.6
通讯作者：
Missous, M
中科院分区：
文献类型：
--
作者：
Haned, N;Missous, M
本文报道了一种新的二维电子气（2DEG）AlGaAs-InGaAs-GaAs霍尔器件。这种新器件在噪声和灵敏度测量方面得到了充分的表征，并应用于低磁场检测（100 nT-100 muT）。两种不同的DC和AC技术已被用于检测低磁场，我们已经能够测量磁场低至I μ T使用DC技术和100 nT使用AC技术。(C)2003 Elsevier Science B.V保留所有权利。
A new two dimensional electron gas (2DEG) AlGaAs-InGaAs-GaAs Hall device, which was designed and optimised with respect to the measurements of low magnetic fields is reported. This new device has been fully characterised in respect of noise and sensitivity measurement, and applied in low magnetic field detection (100 nT-100 muT). Two different DC and AC techniques have been used to detect low magnetic fields and we have been able to measure magnetic fields as low as I muT using DC techniques and 100 nT using AC techniques. (C) 2003 Elsevier Science B.V All rights reserved.