Nonequilibrium carrier transport in superconducting niobium-silicon heterostructures.
Nonequilibrium carrier transport in superconducting niobium-silicon heterostructures.
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超导铌硅异质结构中的非平衡载流子传输。
DOI：
10.1103/physrevb.45.535
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
de Lange L
中科院分区：
文献类型：
--
作者：
van Huffelen WM;Klapwijk;de Lange L
研究了夹在两个超导电极之间的 50 nm 厚单晶硅薄膜的载流子传输。发现了强烈依赖于电压的正常电流，远低于正常状态下的值，以及超导能隙的约数处的结构。结果被解释为热电子效应，考虑了界面处的弹性和安德烈夫散射并忽略了硅中的能量弛豫。有人认为界面处的弹性散射是由于费米动量不匹配造成的。
Carrier transport through a 50-nm-thick single-crystal silicon film sandwiched between two superconducting electrodes is studied. A strongly voltage-dependent normal current is found, substantially below the value in the normal state, together with the structure at submultiples of the superconducting energy gap. The results are explained as a hot-electron effect, taking into account elastic and Andreev scattering at the interfaces and ignoring energy relaxation in the silicon. It is argued that the elastic scattering at the interfaces is due to Fermi-momentum mismatch.