Electrical Characterizations of Paraelectric BST Thin Films up to 1 THz: Realization of Microwave Phaseshifters
Electrical Characterizations of Paraelectric BST Thin Films up to 1 THz: Realization of Microwave Phaseshifters
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DOI：
10.1080/00150190701367036
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发表时间：
2007-05
期刊：
影响因子：
0.8
通讯作者：
G. Vélu;G. Houzet;L. Burgnies;J. Carru;A. Marteau;K. Blary;D. Lippens;P. Mounaix;M. Tondusson;E. Nguéma
中科院分区：
文献类型：
--
作者：
G. Vélu;G. Houzet;L. Burgnies;J. Carru;A. Marteau;K. Blary;D. Lippens;P. Mounaix;M. Tondusson;E. Nguéma
采用溶胶-凝胶法在4cm 2蓝宝石衬底上制备了BST薄膜。电气特性已在一个非常大的频率范围内进行。从1 kHz到500 GHz，介电常数ε r约为300，准无频散。在500 GHz至1 THz的范围内，德拜弛豫模式的存在被假定。用这些BST膜制成的变容二极管在40伏偏压下显示出它们的电容降低约1.7倍。移相器已经实现了这些变容二极管：在30 GHz的40伏的偏置允许获得360度的相移。
BST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around 300 with quasi no frequency dispersion. In the 500 GHz to 1 THz range, the existence of a Debye relaxation mode is postulated. Varactors made with these BST films show a decrease of their capacitance by a factor of about 1.7 under 40 volts of bias. Phaseshifters have been realized with these varactors: a bias of 40 volts at 30 GHz permits to obtain a phaseshift of 360 degrees.