Heterogeneous processes in CF4/O2 plasmas probed using laser-induced fluorescence of CF2
Heterogeneous processes in CF4/O2 plasmas probed using laser-induced fluorescence of CF2
复制标题
使用 CF2 激光诱导荧光探测 CF4/O2 等离子体中的异质过程
DOI：
10.1063/1.346551
复制
发表时间：
1990
影响因子：
3.2
通讯作者：
S. Colson
中科院分区：
文献类型：
--
作者：
S. Hansen;G. Luckman;G. C. Nieman;S. Colson
使用CF2的激光诱导荧光来监测10300 mTorr CF 4/O2等离子体中的异质过程。CF2在氟化铜和银表面在13.56-MHz射频放电中被快速去除，这是通过其空间分布的明显下降来判断的。这些金属，当用作蚀刻掩模，是已知的，以加速等离子体蚀刻的硅，目前的结果表明，在这个过程中涉及的催化脱卤的CF2。相比之下，铝和二氧化硅表现出与CF2的可忽略的反应性，这表明铝掩模不会明显加速硅蚀刻，并且基态CF2不会有效地蚀刻二氧化硅。测量的CF2衰减在脉冲放电耦合直接激光溅射金属到气相中表明CF2和活性金属之间的相互作用是纯粹的异质性。然而，铝确实表现出与CF2的均匀反应性。等离子体溅射很容易使活性金属重新分布;硅蚀刻很容易发生。
Laser‐induced fluorescence of CF2 is used to monitor heterogeneous processes in ≊300 mTorr CF4/O2 plasmas. CF2 is rapidly removed at fluorinated copper and silver surfaces in 13.56‐MHz rf discharges as judged by a distinct dip in its spatial distribution. These metals, when employed as etch masks, are known to accelerate plasma etching of silicon, and the present results suggest catalytic dehalogenation of CF2 is involved in this process. In contrast, aluminum and silicon dioxide exhibit negligible reactivity with CF2, which suggests that aluminum masks will not appreciably accelerate silicon etching and that ground state CF2 does not efficiently etch silicon dioxide. Measurement of CF2 decay in a pulsed discharge coupled with direct laser sputtering of metal into the gas phase indicates the interaction between CF2 and the active metals is purely heterogeneous. Aluminum does, however, exhibit homogeneous reactivity with CF2. Redistribution of active metal by plasma sputtering readily occurs; silicon etch ...