Tris(ß-ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors.
Tris(ß-ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors.
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作为氧化铝前体的三(α-酮亚胺)铝(III)化合物。
DOI：
10.1002/cplu.202200411
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发表时间：
2023
期刊：
影响因子：
3.4
通讯作者：
Douglas SP
中科院分区：
文献类型：
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作者：
Douglas SP
前驱体设计是定制沉积轮廓以制备多种功能材料的关键步骤。大多数市售氧化铝前体需要高加工温度（>500 °C）。本文中，我们报告了通过改变配体中的R取代基来调节一系列八面体配位的[Al（MeCN（R）CHC=OMe）3]型三（β-酮亚胺）铝络合物的分解曲线（200-350 °C）。该配合物是由三甲基胺铝烷（TMAA）和一系列具有不同R-取代基大小的N-取代β-酮亚胺配体（R-acnacH，R=Me，Et，iPr，Ph）反应得到的。当使用空间位阻更大的配体（R=Mes）时，Al原子变成五配位，因此代表这些类型化合物中金属周围八面体配位的阈值，因此导致分解曲线的变化。所得化合物已通过NMR光谱、质谱、元素分析和单晶X射线衍射表征。[Al（MeCN（Me）CHC=OMe）3]已被用作沉积Al 2 O3的单一源前体。用气溶胶辅助化学气相沉积法（AACVD），以甲苯为溶剂，制备了薄膜，并用SEM、EDX和XPS进行了分析。
Precursor design is the crucial step in tailoring the deposition profile towards a multitude of functional materials. Most commercially available aluminium oxide precursors require high processing temperatures (>500 °C). Herein, we report the tuning of the decomposition profile (200–350 °C) of a range of octahedrally coordinated tris(β‐ketoiminate) aluminium complexes of the type [Al(MeCN(R)CHC=OMe)3], by varying the R substituents in the ligands. The complexes are derived from the reaction of trimethylamine alane (TMAA) and a series of N‐substituted β‐ketoiminate ligands (R‐acnacH, R=Me, Et,iPr, Ph) with varying R‐substituents sizes. When the more sterically encumbered ligand (R=Mes) was used, the Al atom became five‐coordinate, therefore representing the threshold to octahedral coordination around the metal in these type of compounds, which, consequently, lead to a change of decomposition profile. The resulting compounds have been characterised by NMR spectroscopy, mass spectrometry, elemental analysis and single crystal X‐ray diffraction. [Al(MeCN(Me)CHC=OMe)3] has been used as a single source precursor for the deposition of Al2O3. Thin films were depositedviaaerosol assisted chemical vapour deposition (AACVD), with toluene as the solvent, and were analysed using SEM, EDX and XPS.