Development of terahertz optical sources for an excitation wavelength of 1.56 μm
Development of terahertz optical sources for an excitation wavelength of 1.56 μm
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开发激发波长1.56μm的太赫兹光源
DOI：
10.1109/irmmw-thz46771.2020.9370373
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
Daichi Shimada; Ryota Ohashi; Masatoshi Koyama; Toshihiko Maemoto; Shigehiko Sasa; Kosuke Okada; Hironaru Murakami; Masayoshi Tonouchi
中科院分区：
文献类型：
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作者：
祐川 真紀帆;杉野 雄亮;谷辺 徹;小澤 満津雄;R. Ohashi; D. Shimada; M. Koyama; T. Maemoto; S. Sasa; F. Murakami; H. Murakami; M. Tonouchi;Daichi Shimada; Ryota Ohashi; Masatoshi Koyama; Toshihiko Maemoto; Shigehiko Sasa; Kosuke Okada; Hironaru Murakami; Masayoshi Tonouchi
在此，我们开发了利用异质结构介导的光致伸缩效应产生高强度太赫兹脉冲的光源。特别是，InAs/GaSb/InAs异质结构，可以与1.56 μm的激发波长进行了检查。为了增加GaSb注入层中的载流子吸收，我们引入了InGaSb层。由于InGaSb注入层的吸收增加，获得了增加的太赫兹辐射。
Herein, we develop optical sources for the generation of high-intensity terahertz pulses utilizing the heterostructure-mediated photo-Dember effect. In particular, InAs/GaSb/InAs heterostructures that can be operated with an excitation wavelength of 1.56 μm were examined. In order to increase the carrier absorption in the GaSb injection layer, we introduced an InGaSb layer. Increased terahertz radiation was obtained owing to the increased absorption of the InGaSb injection layer.