Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth -: art. no. 203101
Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth -: art. no. 203101
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DOI：
10.1063/1.2128487
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发表时间：
2005-11-14
影响因子：
4
通讯作者：
Glas, F
中科院分区：
文献类型：
--
作者：
Harmand, JC;Patriarche, G;Glas, F
在（111）B取向的表面上沉积Au纳米颗粒后，通过分子束外延生长GaAs纳米线。测试了不同的生长持续时间和不同的生长终止。在纳米线的生长之后，通过透射电子显微镜和能量色散X射线光谱分析金属颗粒的结构和组成。我们确定了三种不同的金属化合物：六方β（'）Au（7）Ga（2）结构、正交AuGa结构和几乎纯的Au面心立方结构。我们解释这些不同的固相是如何与样品的生长历史。得出的结论是，在线生长过程中，金属颗粒是液体，与普遍接受的汽-液-固机制。此外，线形态的分析表明，Ga吸附原子迁移沿着线的侧壁与约3 μ m的平均长度。(C)2005年美国物理学会。
GaAs nanowires were grown by molecular-beam epitaxy on (111)B oriented surfaces, after the deposition of Au nanoparticles. Different growth durations and different growth terminations were tested. After the growth of the nanowires, the structure and the composition of the metallic particles were analyzed by transmission electron microscopy and energy dispersive x-ray spectroscopy. We identified three different metallic compounds: the hexagonal beta(')Au(7)Ga(2) structure, the orthorhombic AuGa structure, and an almost pure Au face centered cubic structure. We explain how these different solid phases are related to the growth history of the samples. It is concluded that during the wire growth, the metallic particles are liquid, in agreement with the generally accepted vapor-liquid-solid mechanism. In addition, the analysis of the wire morphology indicates that Ga adatoms migrate along the wire sidewalls with a mean length of about 3 mu m. (C) 2005 American Institute of Physics.