Magnetic field and temperature dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses
Magnetic field and temperature dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses
复制标题
飞秒激光脉冲激发的 InAs 表面太赫兹辐射的磁场和温度依赖性
DOI：
10.1063/1.1399023
复制
发表时间：
2001
影响因子：
3.2
通讯作者：
K. Nakayama
中科院分区：
文献类型：
--
作者：
M. Hangyo;M. Migita;K. Nakayama
研究了飞秒激光脉冲激发InAs表面产生太赫兹辐射的磁场（0-5 T）和温度（10-300 K）特性。磁场和低温下的辐射强度强烈增强，这是解释的基础上简单的经典运动的光激发电子下的内置表面电场和洛伦兹力进行散射。的辐射光谱是广泛的，即使在低温下，在高磁场下，这表明强电子散射机制存在的光激发电子在InAs表面。
The magnetic field (0–5 T) and temperature (10–300 K) dependence of terahertz radiation from InAs surfaces excited by femtosecond laser pulses has been studied in detail. The radiation intensity is strongly enhanced under the magnetic field and at low temperatures, which is explained based on simple classical motion of photoexcited electrons under a built-in surface electric field and Lorentz force undergoing scattering. The radiation spectra are broad even at low temperatures under high magnetic fields, which suggests that strong electron scattering mechanisms exist for photoexcited electrons at InAs surfaces.