AlN thin film grown on different substrates by hydride vapor phase epitaxy
AlN thin film grown on different substrates by hydride vapor phase epitaxy
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低温氢化物气相外延在不同衬底上生长AlN薄膜
DOI：
10.1016/j.jcrysgro.2015.11.040
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发表时间：
2016-02-15
影响因子：
1.8
通讯作者：
Xu, K.
中科院分区：
文献类型：
--
作者：
Sun, M. S.;Zhang, J. C.;Xu, K.
采用氢化物气相外延法在GaN/蓝宝石模板、6 H-SiC和蓝宝石衬底上生长了AlN薄膜。利用X射线衍射（XRD）和原子力显微镜（AFM）研究了生长条件和衬底对晶体质量和生长模式的影响。结果表明，在1000 ℃左右，低压有利于高质量AlN薄膜的生长。在GaN/Sapphire、6 H-SiC和Sapphire衬底上生长的200 nm AlN薄膜的（0002）XRD半峰全宽（FWHM）分别为220、187和260 arc s。而（1012）的对应物分别是1300、662和2650弧s。这两个都表明，低位错密度的AlN生长在6 H-SiC。蓝宝石衬底上AlN薄膜的形貌由最初的无聚结的岛状结构转变为在1200 nm处有原子台阶的聚结结构。而在6 H-SiC和GaN/蓝宝石上的样品在200 nm的厚度下显示出光滑的表面，具有清晰的原子台阶。结果表明，AlN在不同衬底上的生长方式不同。分析认为，AlN与衬底之间晶格失配的不同导致了不同的晶体质量和生长模式。(C)2015 Elsevier B. V.版权所有。
AlN thin films have been grown on GaN/sapphire templates, 6 H-SiC and sapphire by hydride vapor phase epitaxy. The influence of growth conditions and substrates on the crystal qualities and growth mode has been investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that the low pressure was favorable for high-quality AlN thin film growth around 1000 degrees C. The full-width at half-maximum (FWHM) of (0002) XRD of 200-nm AlN thin film grown on GaN/sapphire, 6 H-SiC and sapphire are 220,187 and 260 arc s, respectively. While the corresponding counterparts of (1012) are 1300, 662 and 2650 arc s, respectively. Both suggested that low dislocation density in AlN grown on 6 H-SiC. The morphology of AlN thin film on sapphire showed islands without coalescence initially, and then changed to be coalescent with atomic steps at 1200 nm. However, those for samples on 6 H-SiC and GaN/sapphire showed smooth surface with clear atomic steps at thickness of 200 nm. The result indicated different growth modes of AlN on different substrates. It was believed that the different lattice mismatchs between AlN and substrates led to the different crystal qualities and growth modes. (C) 2015 Elsevier B.V. All rights reserved.