Large topological hall effect observed in tetragonal Mn2PtSn Heusler thin film
Large topological hall effect observed in tetragonal Mn2PtSn Heusler thin film
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DOI：
10.1063/1.5039921
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发表时间：
2018-08
影响因子：
4
通讯作者：
Yueqing Li;B. Ding;Xiaotian Wang;Hong-wei Zhang;Wenhong Wang;Zhongyuan Liu
中科院分区：
文献类型：
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作者：
Yueqing Li;B. Ding;Xiaotian Wang;Hong-wei Zhang;Wenhong Wang;Zhongyuan Liu
四方结构的Mn-Pt-SnHeusler化合物之所以引起人们的兴趣，是因为它们能够实现磁性反天子相，这可能会导致低能量成本的自旋电子器件应用。本文报道了在热氧化硅衬底上磁控溅射四方相Mn2PtSn薄膜的制备及其磁性和输运特性的系统研究。我们在150 μΩ K附近观察到了高达0.57 cm的大的拓扑霍尔电阻率，这是迄今为止锰基金属材料中的最大值。此外，在10 K-300 K的很宽的温度范围内，大的拓扑霍尔效应(THER)出现在与场相关的霍尔电阻率与磁化强度相差很大的磁场区域。四方结构的Mn2PtSn四方化合物由于能够实现磁性反天子相而引起人们的兴趣，这可能会导致低能量成本的自旋电子器件的应用。本文报道了在热氧化硅衬底上磁控溅射四方相Mn2PtSn薄膜的制备及其磁性和输运特性的系统研究。我们在150 μΩ K附近观察到了高达0.57 cm的大的拓扑霍尔电阻率，这是迄今为止锰基金属材料中的最大值。此外，在10 K-300 K的很宽的温度范围内，大的拓扑霍尔效应(THER)出现在与场相关的霍尔电阻率与磁化强度相差很大的磁场区域。这也为实现四方相Mn2PtSn四方薄膜中的磁性反天子提供了途径。
Tetragonal Mn-Pt-Sn Heusler compounds have been of interest because they enable magnetic antiskyrmion phases, which can potentially lead to low energy cost spintronic device applications. We report the synthesis and systematic study of the magnetic and transport properties of magnetron sputtered tetragonal Mn2PtSn thin films on the thermally oxidized Si substrates. We have observed a large topological Hall resistivity up to 0.57 μΩ cm around 150 K, which is the largest value among the Mn-based metallic materials so far. Moreover, the large topological Hall effect (THE) appears in a very wide temperature range of 10 K–300 K in a magnetic field region where the field-dependent Hall resistivity largely deviates from the magnetization. The large THE indicated here may also provide pathways towards realizing the magnetic antiskyrmions in tetragonal Mn2PtSn thin films.Tetragonal Mn-Pt-Sn Heusler compounds have been of interest because they enable magnetic antiskyrmion phases, which can potentially lead to low energy cost spintronic device applications. We report the synthesis and systematic study of the magnetic and transport properties of magnetron sputtered tetragonal Mn2PtSn thin films on the thermally oxidized Si substrates. We have observed a large topological Hall resistivity up to 0.57 μΩ cm around 150 K, which is the largest value among the Mn-based metallic materials so far. Moreover, the large topological Hall effect (THE) appears in a very wide temperature range of 10 K–300 K in a magnetic field region where the field-dependent Hall resistivity largely deviates from the magnetization. The large THE indicated here may also provide pathways towards realizing the magnetic antiskyrmions in tetragonal Mn2PtSn thin films.