Imaging of edge channels in the integer quantum Hall regime by the lateral photoelectric effect.
Imaging of edge channels in the integer quantum Hall regime by the lateral photoelectric effect.
复制标题
通过横向光电效应对整数量子霍尔区域中的边缘通道进行成像。
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
Wolter
中科院分区：
文献类型：
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作者：
van Haren RJ;de Lange W;Blom;Wolter
使用GaAs衬底和二维电子气之间的低迁移率二维空穴气作为内部栅极，可以使量子霍尔区域中的边缘沟道在宏观上变宽。通过横向光电效应检测通道的位置和宽度。在霍尔条的大面积上以灰色调显示的二维图像清楚地显示了通道的位置。
Using a low-mobility two-dimensional hole gas in between the GaAs substrate and the two-dimensional electron gas as an interior gate, the edge channels in the quantum Hall regime can be made macroscopically wide. The location and width of the channels are detected by means of the lateral photo electric effect. Two-dimensional images displayed in grey tones made across large areas of a Hall bar clearly show the positions of the channels.