Study on Chemical Mechanical Polishing of Silicon Wafer
Study on Chemical Mechanical Polishing of Silicon Wafer
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发表时间：
2010
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通讯作者：
Liu Yu-ling
中科院分区：
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作者：
Liu Yu-ling
介绍了硅片的化学机械抛光技术，重点考察了抛光液的pH值、抛光压力、抛光布对10.16 cm硅片的材料去除率和表面质量的影响，获得了合适的工艺参数，并对抛光过程中出现的各种缺陷进行了分析，提出了解决方案。
The CMP technology of silicon wafers was described.The pH value of slurry,polishing pressure,polishing cloth on material removal rate and surface quality of the 10.16 cm silicon wafer was focused to investigate.The appropriate process parameters were acquired,besides,some kinds of defects which appeared during the polishing process were analyzed,and the solutions were proposed.