Orientation Gradients at Boundaries in Micron‐Sized Bicrystals
Orientation Gradients at Boundaries in Micron‐Sized Bicrystals
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DOI：
10.1002/adem.201100242
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发表时间：
2012-03
影响因子：
3.6
通讯作者：
Nousha Kheradmand;H. Vehoff
中科院分区：
文献类型：
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作者：
Nousha Kheradmand;H. Vehoff
在微米尺寸的Ni双晶体中，在压缩测试之后，通过电子背散射衍射（EBSD）测量取向梯度。结果清楚地表明，EBSD可用于研究边界处的位错堆积。使用具有单个和多个滑移取向的双晶体，我们的结果表明，随着柱的尺寸减小，由于交叉滑移引起的取向变化减小，并且边界处的取向变化增加。这直接表明，当位错-位错相互作用的概率由于直径小于约2微米的双晶中的源限塑性而降低时，硬化机制发生了变化。
In micron‐sized Ni bicrystals, after compression tests, orientation gradients are measured by electron back scattering diffraction (EBSD). The results clearly show that EBSD can be used to study dislocation pile‐ups at boundaries. Using bicrystals with single and multiple slip orientations our results show that with decreasing the size of the pillars the orientation changes due to cross‐slip decreases and the orientation changes at the boundary increases. This directly indicates a change in the hardening mechanism when the probability of dislocation–dislocation interaction decreases due to source‐limited plasticity in the bicrystals with diameters below approximately two microns.