Coherent time-resolved investigation of LO-phonon dynamics in GaAs.
Coherent time-resolved investigation of LO-phonon dynamics in GaAs.
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DOI：
10.1103/physrevb.43.12049
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发表时间：
1991-05
期刊：
影响因子：
--
通讯作者：
Vallée;Bogani
中科院分区：
文献类型：
--
作者：
Vallée;Bogani
利用红外时间分辨相干反斯托克斯拉曼散射技术研究了GaAs中相干激发LO声子的动力学。lo声子失相时间作为晶体温度的函数被精确测量。结果表明，在布里渊区的L临界点处，弛豫主要是带内衰减为横声声子和LO声子。经常提出的两个纵向声学声子的衰变路径被发现与我们的温度相关测量结果不相容。
The dynamics of coherently excited LO phonons is investigated in GaAs using an infrared time-resolved coherent anti-Stokes Raman scattering technique. The LO-phonon dephasing time is precisely measured as a function of crystal temperature. The results reveal that the relaxation is dominated by the intraband decay into a transverse-acoustic phonon and a LO phonon at the L critical point of the Brillouin zone. The frequently proposed decay route into two longitudinal-acoustic phonons is found to be incompatible with results from our temperature-dependent measurements.