Angle-resolved-photoemission study of the electronic structure of the Si(001)c(4 x 2) surface.
Angle-resolved-photoemission study of the electronic structure of the Si(001)c(4 x 2) surface.
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Si(001)c(4 x 2) 表面电子结构的角分辨光发射研究。
DOI：
10.1103/physrevlett.65.2704
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发表时间：
1990
影响因子：
8.6
通讯作者：
Kono
中科院分区：
文献类型：
--
作者：
Enta;Suzuki;Kono
通过将宽台阶单畴Si（001）2×1表面冷却至200-80 K，获得了宽台阶单畴Si（001）c（4×2）表面。在200-100 K温度范围内测量了Si（001）c（4×2）表面的角分辨紫外光电子能谱，并与Si（001）2×1表面的角分辨紫外光电子能谱进行了比较。Si（001）c（4×2）表面的电子结构似乎可以解释为表面Si的不对称二聚体的«反铁磁»序。Si（001）2×1表面的电子结构与c（4×2）表面相似
A widce-terrace single-domain Si(001)c(4×2) surface has been obtained by cooling a wide-terrace single-domain Si(001) 2×1 surface to 200-80 K. Angle-resolved ultraviolet photoelectron spectra have been measured for the Si(001)c(4×2) surface at 200-100 K and compared with those for the Si(001) 2×1 surface. The electronic structure of the Si(001) c(4×2) surface appears to be explained as that expected for «antiferromagnetic» order of asymmetric dimers of surface Si. The electronic structure of the Si(001) 2×1 surface appears to be reminiscent of the c(4×2) surface