Thick film compound semiconductors for X-ray imaging applications
Thick film compound semiconductors for X-ray imaging applications
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DOI：
10.1016/j.nima.2006.01.110
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发表时间：
2006-07
影响因子：
1.4
通讯作者：
P. Sellin
中科院分区：
文献类型：
--
作者：
P. Sellin
综述了用于辐射成像的厚膜化合物半导体材料的研究现状。多晶高Z半导体为X射线和γ成像提供了许多显著的优势，并为大面积直接转换成像探测器提供了优秀的技术。在开发高纯度多晶层方面，最近在两个不同的材料组中取得了重大进展，即CdTe/CDZnTe材料系统和Z>；80汞、铅、铋和Tl化合物。本文综述了各种厚膜材料的电荷输运和探测性能，并介绍了探测器原型系统的最新成像性能。
The current status of thick film compound semiconductor materials for radiation imaging applications is reviewed. Polycrystalline high-Z semiconductors offer a number of significant advantages for X-ray and γ-ray imaging, and provide an excellent technology for large area direct conversion imaging detectors. There has been significant recent progress in the development of high-purity polycrystalline layers in two distinct material groups, namely the CdTe/CdZnTe material system, and the Z>80 compounds of Hg, Pb, Bi and Tl. In this paper the charge transport and detection performance of these various thick film materials is summarised, and the most recent imaging performance of prototype detector systems is presented.