Femtosecond laser induced micropatterning of graphene film
Femtosecond laser induced micropatterning of graphene film
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DOI：
10.1016/j.matlet.2011.02.057
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发表时间：
2011-06-15
影响因子：
3
通讯作者：
Umeno, Masayoshi
中科院分区：
文献类型：
--
作者：
Kalita, Golap;Qi, Litao;Umeno, Masayoshi
利用飞秒激光切割工艺对化学气相沉积合成的大面积石墨烯薄膜进行微图案化。在很短的时间内，无需使用任何抗蚀剂或其他覆盖石墨烯表面的材料，就可以制造出均匀的微带或其他图案结构。一旦确定了合适的激光束剂量，就能获得清晰的边缘轮廓和干净的蚀刻效果。扫描电子显微镜研究表明，图案化的微带宽度为5微米，长度为毫米级。通过控制激光能量和对激光烧蚀过程进行预编程，可以控制图案化微带的宽度。对微带边缘的拉曼研究显示，D峰增强且出现D + G模式，这表明存在边缘缺陷。这种缺陷可以解释为由于激光蚀刻导致的氧化破坏了sp(2)碳的杂化。拉曼研究表明，激光切割石墨烯薄膜时没有无定形碳形成。所提出的工艺展示了一种在大面积石墨烯片上制作图案化微带的简单方法，这对于微电子制造可能是极其必要的。（C）2011爱思唯尔公司。版权所有。
Micropatterning of CVD synthesized large area graphene film is demonstrated with femtosecond laser cutting process. Homogenous microribbon or other patterned structure can be fabricated without using any resist or other material containing the graphene surface within a very short duration. Once the suitable laser beam doses are determined, sharp edge profile and clean etching are obtained. Scanning electron microscopic study shows that the patterned microribbon is having 5 pm width and mm in length. The width of the patterned microribbon can be controlled with control of laser energy and preprogramming of laser ablation process. Raman study at the edge of the microribbon shows increase in D peak and appearance of D + G mode, signifying edge defects. The defect can be explained from the breaking of sp(2) carbon hybridization with oxidation due to laser etching. The Raman study shows no amorphous carbon formation with laser cutting of the graphene film. The presented process shows a simple way to make patterned microribbon on large area graphene sheet which can be extremely necessary for microelectronics fabrication. (C) 2011 Elsevier B.V. All rights reserved.