Superconductivity of InN caused by In‐In nano‐structure
Superconductivity of InN caused by In‐In nano‐structure
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DOI:
10.1002/pssc.200673228
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发表时间:
2007-02
期刊:
影响因子:
--
通讯作者:
T. Inushima
中科院分区:
文献类型:
--
作者:
T. Inushima
There is an optimum carrier density for the occurrence of the superconductivity in n-type InN. The lowest carrier density is limited by the Mott transition of ne ∼ 2 × 1017 cm–3 and the highest density is limited by the superconductivity to metal transition of ne ∼ 5 × 1020 cm–3. Between these carrier densities, InN shows superconductivity and vortex motion is a current tunneling through micro Josephson-junctions. A mechanism is proposed where the occurrence of the superconductivity is related to the presence of two u -parameters of 3/8 and 5/8, which causes In-In chains of finite length in the ab plane. The In-In chains, which originate from the In-In nano-structure elongating along [110], are coupled to form micro Josephsonjunctions. A possibility of nano-structure instability is suggested by the temperature dependence of the u -parameter obtained by molecular dynamics calculations. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)