Electrical properties of self-assembled branched InAs nanowire junctions.
Electrical properties of self-assembled branched InAs nanowire junctions.
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DOI：
10.1021/nl073193y
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发表时间：
2008-03
期刊：
影响因子：
10.8
通讯作者：
D. Suyatin;Jie J. Sun;Andreas Fuhrer;D. Wallin;L. Fröberg;L. Karlsson;I. Maximov;L. Wallenberg
中科院分区：
文献类型：
--
作者：
D. Suyatin;Jie J. Sun;Andreas Fuhrer;D. Wallin;L. Fröberg;L. Karlsson;I. Maximov;L. Wallenberg
我们研究了自组装分枝InAs纳米线的电学性质。采用化学束外延技术催化生长了分枝纳米线，并利用电子束光刻技术制备了三端纳米电子器件。我们证明，与传统的宏观结不同，自组装纳米线结器件表现出可调的非线性电学特性和弹道电子传输的特征。作为应用实例，我们证明了自组装的三端纳米线结可以在室温下实现对输入电信号的混频、倍频和相位差检测功能。我们的结果表明支化半导体纳米结构在纳米电子学中具有广泛的潜在应用前景。
We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.