Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
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DOI：
10.1063/1.4817400
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发表时间：
2013-07
期刊：
影响因子：
--
通讯作者：
T. Boggess
中科院分区：
文献类型：
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作者：
T. Boggess
从77-300K测量了掺杂和未掺杂的中波红外InAs/InAsSbⅡ类超晶格(T2SL)和InAsSb合金中的少数载流子寿命，并用Shockley-Read-Hall(SRH)、辐射和俄歇复合分析了寿命，从而区分了各种复合机制的贡献，并确定了主要的复合机制。对于T2SL，SRH重组是主要机制。分别测定了未掺杂和掺杂的T2SLs的能级能量分别为130 meV和70 meV。在整个温度范围内，合金的寿命受到辐射和俄歇复合的限制，而SRH没有显著的贡献。
Minority carrier lifetimes in doped and undoped mid-wave infrared InAs/InAsSb type-II superlattices (T2SLs) and InAsSb alloys were measured from 77–300 K. The lifetimes were analyzed using Shockley-Read-Hall (SRH), radiative, and Auger recombination, allowing the contributions of the various recombination mechanisms to be distinguished and the dominant mechanisms identified. For the T2SLs, SRH recombination is the dominant mechanism. Defect levels with energies of 130 meV and 70 meV are determined for the undoped and doped T2SLs, respectively. The alloy lifetimes are limited by radiative and Auger recombination through the entire temperature range, with SRH not making a significant contribution.