Silicon-plasmonic integrated circuits for terahertz signal generation and coherent detection
Silicon-plasmonic integrated circuits for terahertz signal generation and coherent detection
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DOI：
10.1038/s41566-018-0237-x
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发表时间：
2018-10-01
期刊：
影响因子：
35
通讯作者：
Koos, C.
中科院分区：
文献类型：
--
作者：
Harter, T.;Muehlbrandt, S.;Koos, C.
光电信号处理为产生和检测太赫兹范围内的超宽带波形（所谓的t波）提供了巨大的潜力。然而，底层器件的制造仍然依赖于使用专用III-V半导体衬底的复杂工艺。这严重限制了当前t波发射器和接收器的应用潜力，并阻碍了这些设备与先进的光子信号处理电路的协整。在这里，我们证明这些限制可以通过等离子体内部光电发射探测器（piped）来克服。piped可以在硅光子平台上实现，从而可以利用相关器件组合的巨大机会。在我们的实验中，我们展示了频率高达1太赫兹的t波信号产生和相干检测。为了证明我们的概念的可行性，我们将管道发射器和接收器单片集成在一个普通的硅芯片上，并使用它们来测量集成t波器件的复杂传输阻抗。
Optoelectronic signal processing offers great potential for generation and detection of ultra-broadband waveforms in the terahertz range (so-called T-waves). However, fabrication of the underlying devices still relies on complex processes using dedicated III-V semiconductor substrates. This severely restricts the application potential of current T-wave transmitters and receivers and impedes co-integration of these devices with advanced photonic signal processing circuits. Here, we demonstrate that these limitations can be overcome by plasmonic internal-photoemission detectors (PIPEDs). PIPEDs can be realized on the silicon photonic platform, which allows exploiting the enormous opportunities of the associated device portfolio. In our experiments, we demonstrate both T-wave signal generation and coherent detection at frequencies up to 1 THz. To prove the viability of our concept, we monolithically integrate PIPED transmitters and receivers on a common silicon chip and use them to measure the complex transfer impedance of an integrated T-wave device.