Heterogeneous Integration of Magnetic Component Windings on Ceramic Substrates

Heterogeneous Integration of Magnetic Component Windings on Ceramic Substrates
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陶瓷基板上磁性元件绕组的异质集成

DOI:
10.1109/jestpe.2020.2989805
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发表时间:
2021
影响因子:
5.5
通讯作者:
Mark C. Johnson
Mark C. Johnson
中科院分区:
工程技术1区
文献类型:
--
作者:
A. Stratta;B. Mouawad;M. Antonini;L. de Lillo;L. Empringham;Mark C. Johnson

文献摘要

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异质集成和封装内转换器概念被认为是释放碳化硅(SiC)和氮化镓(GaN)器件全部潜力的技术。控制换向回路中的寄生元件和功率模块内的无源滤波器集成降低了晶体管的过流和过压应力的风险,并且可以改善对源处的高频噪声的抑制,从而使整个转换器的操作更安全。然而,目前,对滤波器集成的主要限制是由商业磁性部件的低能量密度造成的。本文进一步研究了在功率模块结构中集成更可靠的高功率密度磁性元件。所提出的方法包括将单个铜部件(代表单个绕组匝)粘合到适当图案化的陶瓷基板上,从而改善滤波器的热管理。首先,基于力学性能对不同的键合技术进行了实验比较。最后,为了证明所提出的路线的可行性和可重复性,一个完整的电感器已被制造使用焊料键合技术。热测试和模拟都证实,由于电感器和冷却系统之间的热交换增强,最大电流密度可以提高到高于商业标准,同时将附近有源器件的温度保持在安全范围内。
Heterogeneous integration and the converter in package concept have been highlighted as enabling technologies to unlock the full potential of silicon carbide (SiC) and gallium nitride (GaN) devices. Control of parasitic elements in the commutation loops and passive filter integration within the power module reduces the risk of overcurrent and overvoltage stresses for the transistors and can improve the containment of high-frequency noise at source, resulting in safer operation of the whole converter. However, at present, the major limitation to filter integration is posed by the low energy density of commercial magnetic components. This article further investigates on the integration of more reliable high-power-density magnetic components within the power module structure. The proposed approach consists of bonding individual copper parts, representative of single winding turns, onto an appropriately patterned ceramic substrate, thus improving the filters thermal management. At first, an experimental comparison between different bonding techniques has been carried out based on mechanical performance. Finally, to prove the feasibility and repeatability of the proposed route, a complete inductor has been manufactured using the solder bonding technique. Both thermal tests and simulations confirmed that due to the enhanced heat exchange between the inductor and cooling system, the maximum current density can be increased above commercial standards while maintaining the temperature in a safe range for the nearby active devices.