Fabrication and characterization of silicon antireflection structures for infrared rays using a femtosecond laser.
Fabrication and characterization of silicon antireflection structures for infrared rays using a femtosecond laser.
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DOI：
10.1364/ol.36.001176
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发表时间：
2011-04
期刊：
影响因子：
3.6
通讯作者：
H. Imamoto;S. Kanehira;Xi Wang;K. Kametani;M. Sakakura;Y. Shimotsuma;K. Miura;K. Hirao
中科院分区：
文献类型：
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作者：
H. Imamoto;S. Kanehira;Xi Wang;K. Kametani;M. Sakakura;Y. Shimotsuma;K. Miura;K. Hirao
我们专注于低反射率的红外传感器，波长在10μm左右，这是人们对人体探测的强烈期待。设计了一种更适合于红外光的凹面结构，并利用飞秒激光光学系统验证了该结构的有效性。利用扫描电子显微镜、傅立叶变换红外光谱和拉曼光谱对该工艺制备的微结构进行了光学测量。测试结果表明，对于波长在10μm左右的低反射红外传感器，实现了良好的无反射结构。
We focus on IR sensors with lower reflection for the wavelength around 10 μm, strongly awaited for detecting human bodies. A concave structure was designed as a more suitable reflection-free structure for IR light, and an optical system with a femtosecond laser was employed for verification of the effectiveness of the structure. The microstructures prepared through this process were fabricated and optically measured using SEM, FT-IR, and Raman spectroscopy. The measurement revealed that good reflection-free structures were realized for IR sensors with lower reflection for the wavelength of around 10 μm.