Wafer-level Variation Modeling for Multi-site RF IC Testing via Hierarchical Gaussian Process

Wafer-level Variation Modeling for Multi-site RF IC Testing via Hierarchical Gaussian Process
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通过分层高斯过程进行多站点 RF IC 测试的晶圆级变异建模

DOI:
10.1109/itc50571.2021.00018
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发表时间:
2021
期刊:
2021 IEEE International Test Conference (ITC)
影响因子:
--
通讯作者:
M. Inoue
M. Inoue
中科院分区:
--
文献类型:
--
作者:
Michihiro Shintani;Riaz;Tomoki Nakamura;Masuo Kajiyama;Makoto Eiki;M. Inoue

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晶圆级性能预测在生产测试中降低测量成本而不影响测试质量一直受到关注。虽然已经提出了几种有效的方法,站点到站点的变化,这是经常观察到的射频电路的多站点测试,尚未得到充分解决。在本文中,我们提出了一个晶圆级的性能预测方法,多站点测试,可以考虑站点到站点之间的变化。该方法基于广泛应用于晶圆级空间相关性建模的高斯过程,通过扩展分层建模来利用测试工程师提供的测试点信息,提高了预测精度。此外,我们提出了一个积极的测试现场抽样方法,以最大限度地降低测量成本。通过工业生产测试数据的实验,我们表明,该方法可以减少估计误差的1/19,使用传统的方法。此外,我们证明了所提出的采样方法可以减少97%的测量数量,同时达到足够的估计精度。
Wafer-level performance prediction has been attracting attention to reduce measurement costs without compromising test quality in production tests. Although several efficient methods have been proposed, the site-to-site variation, which is often observed in multi-site testing for radio frequency circuits, has not yet been sufficiently addressed. In this paper, we propose a wafer-level performance prediction method for multi-site testing that can consider the site-to-site variation. The proposed method is based on the Gaussian process, which is widely used for wafer-level spatial correlation modeling, improving the prediction accuracy by extending hierarchical modeling to exploit the test site information provided by test engineers. In addition, we propose an active test-site sampling method to maximize measurement cost reduction. Through experiments using industrial production test data, we demonstrate that the proposed method can reduce the estimation error to 1/19 of that obtained using a conventional method. Moreover, we demonstrate that the proposed sampling method can reduce the number of the measurements by 97% while achieving sufficient estimation accuracy.
DOI: 10.1111/j.2517-6161.1977.tb01600.x
发表时间: 1977-01-01
期刊: JOURNAL OF THE ROYAL STATISTICAL SOCIETY SERIES B-METHODOLOGICAL
影响因子: --
作者:
DEMPSTER, AP;LAIRD, NM;RUBIN, DB
通讯作者: RUBIN, DB