Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method
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DOI：
10.1109/ted.2011.2160547
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发表时间：
2011-09-01
影响因子：
3.1
通讯作者：
Zanoni, Enrico
中科院分区：
文献类型：
--
作者：
Meneghini, Matteo;Ronchi, Nicolo;Zanoni, Enrico
本文提出了一种用于研究 GaN 基高电子迁移率晶体管 (HEMT) 中的捕获和热电子效应的快速方法。所提出的方法基于脉冲 I-D-V-G 测量和电致发光表征，并提供对以下内容的快速有效评估：1) 栅极下方区域中陷阱的存在； 2）栅漏接入区发生的俘获现象； 3）陷阱在限制最大栅漏电场和等效电子温度方面的作用。该方法通过在带有和不带有钝化的不同栅极材料的 GaN 基 HEMT 上进行的分片实验进行验证。
This paper presents a fast methodology for the investigation of trapping and hot-electron effects in GaN-based high-electron mobility transistors (HEMTs). The presented method is based on pulsed I-D-V-G measurements and electroluminescence characterization and provides a rapid and effective evaluation of the following: 1) the presence of traps in the region under the gate; 2) trapping phenomena occurring in the gate-drain access region; 3) the role of traps in limiting the maximum gate-drain electric field and the equivalent electron temperature. The method is validated by means of a split-wafer experiment carried out on GaN-based HEMTs with different gate materials with and without passivation.