Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in MgxZn1−xO composition spreads
Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in MgxZn1−xO composition spreads
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DOI：
10.1063/1.1623923
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发表时间：
2003-11
影响因子：
3.2
通讯作者：
I. Takeuchi;W. Yang;K. Chang;M. Aronova;T. Venkatesan;R. Vispute;L. Bendersky
中科院分区：
文献类型：
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作者：
I. Takeuchi;W. Yang;K. Chang;M. Aronova;T. Venkatesan;R. Vispute;L. Bendersky
我们已经制造了MgxZn 1 −xO外延成分分布，其中整个芯片的成分从ZnO到MgO线性变化。通过使用扫描X射线显微衍射仪和透射电子显微镜，我们已经绘制了整个传播的相演变。我们发现了立方和六方MgxZn 1-xO之间独特的生长关系，其中它们的基面在相图的相分离区域（0.37 x 0.6）中重合。跨展布连续变化的带隙被用作紧凑的宽带光电检测器阵列的基础，该阵列具有在展布膜上的不同位置处分别起作用的检测波长范围。在290-380 nm的波长范围内，使用扩散的ZnO到Mg0.4Zn0.6O区域，证明了组合物扩散光电探测器。
We have fabricated MgxZn1−xO epitaxial composition spreads where the composition across the chip is linearly varied from ZnO to MgO. By using a scanning x-ray microdiffractometer and transmission electron microscopy, we have mapped the phase evolution across the spread. We have discovered a unique growth relationship between cubic and hexagonal MgxZn1−xO where their basal planes are coincident in the phase-separated region of the phase diagram where 0.37⩽x⩽0.6. The continuously changing band gap across the spread is used as a basis for compact broadband photodetector arrays with a range of detection wavelengths separately active at different locations on the spread film. The composition-spread photodetector is demonstrated in the wavelength range of 290–380 nm using the ZnO to Mg0.4Zn0.6O region of the spread.