Piezotronic‐based magnetoelectric sensor: Fabrication and response
Piezotronic‐based magnetoelectric sensor: Fabrication and response
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DOI：
10.1002/pssa.201532924
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发表时间：
2016-08
期刊：
影响因子：
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通讯作者：
J. Gröttrup;S. Kaps;J. Carstensen;D. Smazna;Y. Mishra;A. Piorra;C. Kirchhof;E. Quandt;R. Adelung
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文献类型：
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作者：
J. Gröttrup;S. Kaps;J. Carstensen;D. Smazna;Y. Mishra;A. Piorra;C. Kirchhof;E. Quandt;R. Adelung
在目前的工作中，磁电-压电器件已被制造使用非常长（毫米长）的ZnO纳米针和微针生长的简单和通用的火焰传输合成方法。压电响应施加的磁场已经研究了最先进的磁电（ME）传感器包含AlN和PZT作为压电相，以及传感器的基础上ZnO纳米针和微米针，这是最好的描述材料在压电应用方面。已经测量了所制造的电子传感器器件的电流电压（I-V）特性，以了解压电和半导体特性的单独贡献。实验获得的压电效应和I-V响应之间的相关性已被拟合使用适当的理论模型，已详细讨论。目前的观察表明，基于ME的压电传感器件具有互补作用，一方面，ME原理有助于更好地理解准一维（Q1 D）ZnO纳米针和微针的压电性质，另一方面，压电效应的集成导致ME器件的灵敏度提高，从而提高ME传感器的质量。
In the present work, magnetoelectric‐piezotronic devices have been fabricated using exceptionally long (mm long) ZnO nano‐ and microneedles grown by the simple and versatile flame transport synthesis approach. The piezotronic response to an applied magnetic field has been investigated for state of the art magnetoelectric (ME) sensors containing AlN and PZT as piezoelectric phase as well as sensors based on ZnO nano‐ and microneedles, which are among the best described materials in terms of piezotronic applications. The current voltage (I–V) characteristics of the fabricated electronic sensor devices have been measured to understand the individual contributions of the piezoelectric and semiconducting properties. The experimentally obtained correlations between the piezotronic effect and the I–V responses have been fitted using appropriate theoretical models which have been discussed in detail. The current observations demonstrate that ME based piezotronic sensing devices have complementary roles, on one hand, the ME principle helps to get a better understanding of the piezotronic nature of quasi one dimensional (Q1D) ZnO nano‐ and microneedles, and on the other hand, the integration of a piezotronic effect leads to an improved sensitivity of the ME devices and hence to a better quality of ME sensors.