Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
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DOI：
10.1063/1.4945367
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发表时间：
2016-04-11
影响因子：
4
通讯作者：
Hwang, Hyunsang
中科院分区：
文献类型：
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作者：
Cha, Euijun;Park, Jaehyuk;Hwang, Hyunsang
过渡金属氧化物NbO2具有绝缘体到金属的过渡(IMT)，被认为是一种很有前途的选择器件，可以与用于交叉点阵列的阻性存储器集成。在这项研究中，我们全面研究了使用蘑菇器件结构的NbO2选择器的刻度。深入了解形成电压(V-f)、阈值电压(V-th)和电流(i-th)的定标行为对于评估NbO_2选择器的电压电位、电流定标和选择性是至关重要的。重要的是，通过分析阈值电流的标度趋势，我们认为IMT的行为受到形成过程中形成的丝状导电路径的强烈影响。这些发现提供了通过最小化NbO2层内的传导路径来最大化选择器器件性能的前景。(C)2016 AIP出版有限责任公司。
The transition metal oxide, NbO2, which exhibits an insulator to metal transition (IMT) is regarded as a promising selector device to be integrated with a resistive memory for cross point array application. In this study, we comprehensively investigated the scaling of an NbO2 selector using a mushroom device structure. A thorough understanding of the scaling behavior of forming voltage (V-f), threshold voltage (V-th), and current (I-th) is essential to evaluate the potential of voltage as well as current scaling and selectivity of NbO2 selector. Importantly, by analyzing the scaling trend of threshold current, we believed that the IMT behavior is strongly affected by filamentary conducting path formed during the forming process. The findings provide the promise to maximize the selector device performance by minimizing the conducting path inside the NbO2 layer. (C) 2016 AIP Publishing LLC.