2.4–10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90 nm Complementary Metal Oxide Semiconductor
2.4–10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90 nm Complementary Metal Oxide Semiconductor
复制标题
采用 90 nm 互补金属氧化物半导体的 2.4–10 GHz 低噪声注入锁定环压控振荡器
DOI：
10.1143/jjap.50.04de03
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发表时间：
2011
影响因子：
1.5
通讯作者：
K. Masu
中科院分区：
文献类型：
--
作者：
Sang;S. Amakawa;N. Ishihara;K. Masu
提出了一种具有次谐波注入锁定功能的宽频带低相位噪声压控振荡器（VCO），并在90 nm互补金属氧化物半导体（CMOS）上实现。其结果是结合了环形VCO自然期望的可扩展性和宽频率调谐范围，以及接近于使用注入锁定的LC VCO的相位噪声性能。制作的电路面积仅为0.00054 mm 2，频率调谐范围为2.4 ~ 10 GHz。对于500 MHz输入基准信号和9.0 GHz（=18×500 MHz）输出频率，1 MHz偏移相位噪声为-125 dBc/Hz。这比-71 dBc/Hz的自激VCO相位噪声提高了54 dB。在9.0 GHz的功耗为9.5 mW。
A wide-frequency-range low-phase-noise voltage controlled oscillator (VCO) with subharmonic injection locking is proposed and an implementation in 90 nm complementary metal oxide semiconductor (CMOS) is demonstrated. The result is a combination of the scalability and wide frequency tuning range naturally expected of a ring VCO and phase-noise performance close to that of an LC VCO using injection locking. The fabricated circuit is only 0.00054 mm2 in area, and its frequency tuning range is from 2.4 to 10 GHz. For a 500 MHz input reference signal and a 9.0 GHz (=18×500 MHz) output frequency, the 1-MHz-offset phase noise was -125 dBc/Hz. This is a 54 dB improvement over the free-running VCO phase noise of -71 dBc/Hz. The power consumption at 9.0 GHz is 9.5 mW.