Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
复制标题
使用微拉曼光谱对 AlGaN/GaN 异质结构场效应晶体管中的缺陷进行热成像
DOI：
10.1063/1.2041823
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发表时间：
2005
影响因子：
4
通讯作者：
P. Heard
中科院分区：
文献类型：
--
作者：
J. Pomeroy;M. Kuball;D. Wallis;A. Keir;K. Hilton;R. Balmer;M. Uren;T. Martin;P. Heard
我们说明了使用显微拉曼映射来研究有源AlGaN scinGaN异质结场效应晶体管中的缺陷对器件温度的局部影响。在缺陷附近发现有源器件的显著温升，比平均器件温度高50-100%。测量的温度分布进行了比较，有限差分模拟。在缺陷附近的热导率降低被认为是负责在这些设备中的局部温度上升，结合在电流分布的可能变化。
We illustrate the use of micro-Raman mapping to study the local effect of defects on device temperature in active AlGaN∕GaN heterostructure field-effect transistors. Significant temperature rises in active devices, 50–100% above average device temperatures, were identified in the vicinity of defects. Measured temperature distributions were compared to finite difference simulations. Reduced thermal conductivity in the defect vicinity was found to be responsible for the local temperature rises in these devices, combined with possible changes in the current flow distribution.