Spray pyrolysed bismuth oxide thin films and their characterization
Spray pyrolysed bismuth oxide thin films and their characterization
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DOI：
10.1016/j.materresbull.2006.01.024
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发表时间：
2006-08
影响因子：
5.4
通讯作者：
T. P. Gujar;V. R. Shinde;C. Lokhande
中科院分区：
文献类型：
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作者：
T. P. Gujar;V. R. Shinde;C. Lokhande
采用溶液喷涂技术，从Bi（NO3）3水溶液中在玻璃基片上沉积了均匀、附着力强、可重复性好的氧化铋薄膜。通过XRD、AFM、光吸收、电阻率和热电动势等测试手段研究了它们的结构、表面形貌、光学和电学性能。XRD结构分析表明，Bi 2 O3主要为单斜晶系，β-Bi 2 O3为四方晶系，Bi 2 O2为非化学计量的混合相。原子力显微镜的表面形貌研究显示，氧化铋微晶的圆形晶粒形态。光学研究表明，所制备的氧化铋薄膜的直接带隙为2.90eV。氧化铋薄膜的电阻率测量表明其具有半导体性质，室温电阻率为107Ωcm。从热电动势测量，电导率被发现是n型。
Uniform, adherent and reproducible bismuth oxide thin films have been deposited on glass substrates from aqueous Bi(NO3)3solution, using the solution spray technique. Their structural, surface morphological, optical, and electrical properties were investigated by XRD, AFM, optical absorption, electrical resistivity and thermo-emf measurements. The structural analysis from XRD pattern showed the formation of mixed phases of monoclinic Bi2O3(predominant), tetragonal β-Bi2O3and nonstiochiometric Bi2O2.33. The surface morphological studies on atomic force micrographs revealed round grain morphology of bismuth oxide crystallites. The optical studies showed a direct band gap of 2.90eV for as-prepared bismuth oxide films. The electrical resistivity measurements of bismuth oxide films indicated a semiconducting behavior with the room temperature electrical resistivity of the order of 107Ωcm. From thermo-emf measurements, the electrical conductivity was found to be of n-type.