Modification of the electronic properties of magic In clusters on Si(111)7 × 7 by different environments
Modification of the electronic properties of magic In clusters on Si(111)7 × 7 by different environments
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DOI：
10.1116/1.4947265
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发表时间：
2016-04
期刊：
影响因子：
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通讯作者：
M. Franz;Julia Schmermbeck;M. Dähne
中科院分区：
文献类型：
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作者：
M. Franz;Julia Schmermbeck;M. Dähne
利用扫描隧道显微镜和光谱研究了幻In团簇在Si（111）7 × 7表面上的电荷再分布和电子性质.在此基础上，重点研究了不同的环境条件，如支撑7 × 7半晶胞的取向和二维团簇阵列的初始生长对团簇电子性质的影响.发现在7 × 7重构的半晶胞中形成的团簇以及与其他团簇相邻的团簇具有不同的电子性质。虽然所有的团簇都表现出半导体行为，但它们的能隙各不相同。此外，由于周围7 × 7表面的金属态进入团簇能隙，在团簇能隙内的隧穿谱中观察到了金属诱导的能隙态.较大的能隙的集群相邻的其他集群，这种情况下，在原则上…
The charge redistribution and the electronic properties of magic In clusters on the Si(111)7 × 7 surface were investigated using scanning tunneling microscopy and spectroscopy. Thereby, special attention was directed to the influence of different environments, such as the orientation of the supporting 7 × 7 half unit cell and the beginning growth of two-dimensional cluster arrays, on the electronic properties of the clusters. It was found that clusters forming in the faulted and the unfaulted half unit cell of the 7 × 7 reconstruction as well as clusters neighboring other clusters exhibit different electronic properties. Although all clusters show a semiconducting behavior, their energy gaps vary. In addition, metal-induced gap states are observed in the tunneling spectra within the energy gap of the clusters due to the metallic states of the surrounding 7 × 7 surface that tail into the energy gap of the clusters. The larger energy gap of clusters neighboring other clusters, a situation that in principle ...