Modulation of Insulator-Metal Transition Temperature by Visible Light in La7/8Sr1/8MnO3 Thin Film
Modulation of Insulator-Metal Transition Temperature by Visible Light in La7/8Sr1/8MnO3 Thin Film
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DOI：
10.1088/0256-307x/27/9/097504
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发表时间：
2010-09
影响因子：
3.5
通讯作者：
H. Ling;Yuping Sun;Wang Bo;L. Xuan;Zhi-Gao Sheng;Xuebin Zhu;W. Song;Zhao-Rong Yang;J. Dai
中科院分区：
文献类型：
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作者：
H. Ling;Yuping Sun;Wang Bo;L. Xuan;Zhi-Gao Sheng;Xuebin Zhu;W. Song;Zhao-Rong Yang;J. Dai
研究了磁场和光照对Si衬底上生长的La_（7/8）Sr_（1/8）MnO_3薄膜电输运性质的影响。在黑暗中，薄膜在TP = 191.9 K时出现绝缘体-金属转变，在Tmin = 48 K时出现低温电阻最小值。磁场和光照均使薄膜的绝缘体-金属转变温度TP升高，但两者对薄膜低温输运性质的影响趋势不同。也就是说，磁场和光照使Tmin分别向更低和更高的温度偏移。光照射下TP和Tmin的增强可以解释为光致空穴掺杂和La 7/8 Sr 1/8 MnO 3的退磁效应。
Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at TP ≈ 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature T P to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both TP and Tmin under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7/8Sr1/8MnO3.