Concurrent Hex-Band GaN Power Amplifier for Wireless Communication Systems
Concurrent Hex-Band GaN Power Amplifier for Wireless Communication Systems
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DOI：
10.1109/lmwc.2010.2098859
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发表时间：
2011-02
影响因子：
3
通讯作者：
R. Fagotti;A. Cidronali;G. Manes
中科院分区：
文献类型：
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作者：
R. Fagotti;A. Cidronali;G. Manes
在这篇文章中，我们提出了一种新的多段传输线匹配技术，应用于并发六频HEMT GaN功率放大器的设计。该PA设计用于在0.9、1.8、2.5、3.5、5.2和5.8 GHz下进行并发操作。实验结果表明，在不同的频段上，最小和最大饱和输出功率分别为33 dBm和36.7 dBm，功率附加效率（PAE）从最小的20%到最大的49%不等。并对模拟结果和实验结果进行了详细的比较。
In this letter, we propose a novel multi-section transmission line matching technique applied to the design of a concurrent hex-band HEMT GaN power amplifier (PA). The PA has been designed for a concurrent operation at 0.9, 1.8, 2.5, 3.5, 5.2, and 5.8 GHz. Experimental results have shown minimum and maximum saturated output power levels of 33 dBm and 36.7 dBm respectively over the different frequency bands, with the power added efficiency (PAE) ranging from a minimum of 20% to a maximum of 49%. A detailed comparison between simulation and experimental results data has also been reported.