Rebound effect of IMT properties by different doping form in Si-doped vanadium dioxide films
Rebound effect of IMT properties by different doping form in Si-doped vanadium dioxide films
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Si掺杂二氧化钒薄膜中不同掺杂形式对IMT性能的回弹效应
DOI：
10.1063/1.4962815
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发表时间：
2016
影响因子：
4
通讯作者：
Jiang Yadong
中科院分区：
文献类型：
--
作者：
Wu Xuefei;Wu Zhiming;Liu Zhijun;Ji Chunhui;Huang Zehua;Su Yuanjie;Gou Jun;Wang Jun;Jiang Yadong
由于其卓越的绝缘体到金属转变（IMT）特性，二氧化钒是一种很有前景的太赫兹调制材料。硅掺杂VO2薄膜具有优异的IMT特性，具有巨大的调制幅度和可调的相变温度，非常适合这一领域。在本文中，我们报道了硅掺杂 VO2 薄膜中 IMT 的反弹效应。随着越来越多的硅掺杂剂被引入到 VO2 薄膜中，IMT 首先被调整到较低的温度，然后异常地转向较高的温度。这种回弹效应通过晶体结构、价态浓度和表面形态得到证实。我们将这种反弹行为归因于硅原子的间隙和取代掺杂。由于它们对微晶的明显影响，VO2 薄膜的 IMT 性能最初被抑制，随后又恢复。
Vanadium dioxide is a promising material for THz modulations due to its remarkable insulator-to-metal transition (IMT) properties. Silicon-doped VO2 films, exhibiting excellent IMT properties with giant modulation amplitude and tunable phase transition temperature, greatly adapt in this area. In this paper, we report on a rebound effect of the IMT in Si-doped VO2 films. As the silicon dopants are increasingly introduced into VO2 films, the IMT is first tuned to lower temperature and then is anomalously shifted to higher temperature. This rebound effect is confirmed by crystal structure, valence concentration, and surface morphology. We attribute this rebound behavior to the interstitial and substitutive doping of Si atoms. Due to their distinct impactions on the crystallite, IMT properties of the VO2 films are depressed initially and recovered later.