Design of an 8-tap CMOS lock-in pixel with lateral electric field charge modulator for highly time-resolved imaging
Design of an 8-tap CMOS lock-in pixel with lateral electric field charge modulator for highly time-resolved imaging
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DOI：
10.1117/12.2251788
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发表时间：
2017-02
期刊：
影响因子：
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通讯作者：
Yuya Shirakawa;M. Seo;K. Yasutomi;K. Kagawa;N. Teranishi;S. Kawahito
中科院分区：
文献类型：
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作者：
Yuya Shirakawa;M. Seo;K. Yasutomi;K. Kagawa;N. Teranishi;S. Kawahito
近年来，CMOS时间分辨成像器件在科学和医学应用中得到了广泛应用。荧光寿命成像显微镜（FLIM）是基础物理学以及生命科学中的一种强大分析工具，是时间分辨成像器件的一种典型应用。在锁相像素设计中，为了获得更好的时间分辨率，多抽头像素架构是非常有效和有用的。在本文中，我们提出了一种带有横向电场电荷调制器（LEFM）的8抽头CMOS锁相像素，并通过CAD模拟证明了所设计像素的有效性。所提出的像素能够以高信噪比（SNR）测量高时间分辨图像，并且即使样品具有多寿命成分也能观察到细胞的各种图像。采用0.11μm 1P4M CIS工艺技术开发了一种8抽头时间分辨CMOS图像传感器芯片。
Recently, CMOS time-resolved imaging devices are being widely used for scientific and medical applications. A fluorescence lifetime imaging microscopy (FLIM), which is a powerful analysis tool in fundamental physics as well as in the life science, is a typical application for the time-resolved imaging devices. For better time-resolution in the lock-in pixel design, a multi-tap pixel architecture is very effective and useful. In this paper, we have proposed an 8-tap CMOS lock-in pixel with lateral electric field charge modulator (LEFM) and demonstrated the effectiveness of designed pixel by CAD simulation. The proposed pixel makes possible to measure the highly time-resolved images with a high signal to noise ratio (SNR) and to observe various images of cells even if a sample has a multi-lifetime component. An 8-tap time-resolved CMOS image sensor chip is developed by 0.11μm 1P4M CIS process technology.