Advances in continuous, in-line processing of stable CdS/CdTe devices
Advances in continuous, in-line processing of stable CdS/CdTe devices
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稳定 CdS/CdTe 器件连续在线加工的进展
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
P. Noronha
中科院分区：
文献类型：
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作者：
W. Sampath;Sandeep Kohli;R. A. Enzenroth;K. Barth;V. Manivannan;J. Hilfiker;P. Mccurdy;K. Barricklow;P. Noronha
一个连续的，在线的过程，适用于高产量的CdS/CdTe光伏器件的制造已被证明。利用这种工艺，用低铁钠钙玻璃（3″×3″）制作了效率为13%的器件，并镀上了抗反射膜。该工艺已扩展到大面积器件（16″ ×16″衬底尺寸）。CdCl<inf>2</inf>处理后，器件的V<inf>oc</inf> = 700 mV，J<inf>sc</inf> = 20 mA/cm<sup>2</sup>.该性能类似于表现出良好稳定性的小面积器件的性能。此外，我们采用椭圆偏振光谱（SE）作为一种非破坏性的工具来表征CdS/CdTe异质结，特别是研究化学处理对薄膜层的光学性质的影响。
A continuous, in-line process suitable for high throughput manufacturing of CdS/CdTe photovoltaic devices has been demonstrated. Utilizing this process, devices with efficiencies of 13% has been fabricated with a low iron soda lime glass (3″×3″) with ant-reflection coatings. The process has been extended to large area devices (16″ ×16″ substrate size). After CdCl<inf>2</inf> treatment, devices showed V<inf>oc</inf> ≫ 700 mV and J<inf>sc</inf> ≫ 20 mA/cm<sup>2</sup>. This performance is similar to the performance of small area devices which showed good stability. Also we have employed Spectroscopic Ellipsometry (SE) as a nondestructive tool to characterize CdS/CdTe heterojunction specifically studying the effects of chemical treatment on the optical properties of the thin-film layers.