Ring Oscillators Based on ZnO Channel JFETs and MESFETs
Ring Oscillators Based on ZnO Channel JFETs and MESFETs
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DOI：
10.1002/aelm.201500431
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发表时间：
2016-07
影响因子：
6.2
通讯作者：
F. Klüpfel;H. von Wenckstern;M. Grundmann
中科院分区：
文献类型：
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作者：
F. Klüpfel;H. von Wenckstern;M. Grundmann
提出了基于结型场效应晶体管以及具有ZnO沟道的金属-半导体场效应晶体管的环形振荡器电路。单级延迟时间下降到110 ns的观察。实验振荡频率与易于测量的器件特性有关，通过一个简单的分析模型。这项工作证明了具有肖特基二极管和双极（pn-）二极管栅极的低功率氧化物基电路的可行性，因为与先前报道的基于绝缘栅极的氧化物薄膜晶体管相比，这两种方法在类似频率下提供了显著更低的工作电压。
Ring oscillator circuits based on junction field‐effect transistors as well as metal–semiconductor field‐effect transistors with ZnO channels are presented. Single stage delay times down to 110 ns are observed. The experimental oscillation frequencies are related to easily measurable device properties by a simple analytical model. This work proves the feasibility of low power oxide based circuits with Schottky diode and bipolar (pn‐) diode gates since both approaches provide significantly lower operation voltages at similar frequencies compared to previously reported oxide thin film transistors based on insulating gates.