Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN
Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN
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DOI：
10.1063/1.4972408
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发表时间：
2016-12-19
影响因子：
4
通讯作者：
Grandjean, Nicolas
中科院分区：
文献类型：
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作者：
Okumura, Hironori;Martin, Denis;Grandjean, Nicolas
利用氨分子束外延生长出净受体浓度（NA-ND）在10 ~ 19 cm（-3）范围内的掺镁GaN。研究了重掺杂p型氮化镓上NiO触点的电学性能。从N-A-N-D与比接触电阻率（rho c）的关系中提取出0.24 eV的势垒高度。我们发现最佳N-A-N-D值为5 × 10(19) cm(-3)，其中rho c低至2 × 10(-5) Omega cm(2)。这种低rho c归因于在NiO/p(+)-GaN界面上通过势垒的空穴隧穿，这在场发射模型中得到了很好的解释。AIP出版社出版。
Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 10 19 cm(-3) range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between N-A-N-D and the specific contact resistivity (rho c). We found that there is an optimum N-A-N-D value of 5 x 10(19) cm(-3) for which rho c is as low as 2 x 10(-5) Omega cm(2). This low rho c is ascribed to hole tunneling through the potential barrier at the NiO/p(+)-GaN interface, which is well accounted for by the field-emission model. Published by AIP Publishing.