Defects in oxygen-implanted silicon-on-insulator structures probed with positrons.
Defects in oxygen-implanted silicon-on-insulator structures probed with positrons.
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用正电子探测氧注入绝缘体上硅结构的缺陷。
DOI：
10.1103/physrevb.44.1812
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
Seraphin
中科院分区：
文献类型：
--
作者：
Nielsen;Lynn;Leung;Cordts;Seraphin
利用可变能量正电子束研究了高能（200 keV）氧注入形成的绝缘体上硅结构的缺陷。基于正电子的探针被发现是特别敏感的顶部Si层的条件。在顶部80 nm的Si层中检测到的开放体积缺陷（空腔）的照射状态。这些缺陷中的大多数通过高温退火（\ensuremath{\sim}1300 \ifmmode^\circ\else\textdegree\fi{}C）去除，之后正电子响应与透射电子显微镜观察到的位错密度相关。正电子探测了晶片上位错密度的变化，证明了正电子在缺陷拓扑中的潜力。
Defects in a silicon-on-insulator structure formed by high-energy (200-keV) oxygen implantation has been studied utilizing a variable-energy positron beam. The positron-based probe is found to be especially sensitive to the condition of the top Si layer. Open-volume defects (cavities) are detected in the top 80-nm Si layer in the as-irradiated state. The majority of these defects are removed by high-temperature annealing (\ensuremath{\sim}1300 \ifmmode^\circ\else\textdegree\fi{}C) after which the positron response correlates with the density of dislocations observed by transmission electron microscopy. Variations in dislocation density across a wafer were probed with positrons, demonstrating the potential of positrons in defect topology.