Growth of high quality amorphous silicon films with significantly improved stability
Growth of high quality amorphous silicon films with significantly improved stability
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生长高质量非晶硅薄膜，稳定性显着提高
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
M. Leonard
中科院分区：
文献类型：
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作者：
V. Dalal;E. Ping;S. Kaushal;M. Bhan;M. Leonard
我们报告了一系列旨在提高非晶硅（a‐Si:H）薄膜稳定性的系统实验结果。我们发现极低水平（0.2-0.4 ppm）的硼补偿，当与有利于材料中坚固的微观结构的生长条件相结合时，导致薄膜的稳定性显著提高，缺陷密度非常低。薄膜的生长采用反应性等离子体束技术，利用来自电子回旋加速器共振源的远程等离子体束。在短期（几分钟）光浸泡和高强度（10×sun）照明条件下的光浸泡下，稳定性都得到了改善。我们得出结论，初始稳定性的提高是硼补偿材料中天然供体（可能是氧）的结果。补偿后的长期不稳定性和相应缺陷密度的惊人降低表明，天然杂质周围的微观结构和结构变化可能起着重要的作用。
We report on the results of a systematic series of experiments aimed at improving the stability of amorphous silicon (a‐Si:H) films. We find that very low levels (0.2–0.4 ppm) of compensation by boron, when combined with growth conditions that favor a robust microstructure in the material, results in films with significantly improved stability and very low defect density. The films were grown using a reactive plasma beam technique using a remote plasma beam from an electron‐cyclotron‐resonance source. The improvement in stability is seen under both short‐term (a few minutes) light soaking, and also under light soaking under high intensity (10×sun) illumination conditions. We conclude that the improvement in initial stability is a result of compensation of native donors (probably oxygen) in the material by boron. The surprising reduction in long term instability and corresponding defect density upon compensation implies that the microstructure and structural changes around the native impurities may play a ...