SnOx as Bottom Hole Extraction Layer and Top In Situ Protection Layer Yields over 14% Efficiency in Sn-Based Perovskite Solar Cells

SnOx as Bottom Hole Extraction Layer and Top In Situ Protection Layer Yields over 14% Efficiency in Sn-Based Perovskite Solar Cells
复制标题

DOI:
10.1021/acsenergylett.2c01659
复制
发表时间:
2022-10
期刊:
影响因子:
22
通讯作者:
Liang Wang;Mengmeng Chen;Shuzhang Yang;Namiki Uezono;Qingqing Miao;G. Kapil;A. Baranwal;Y. Sanehira;Dandan Wang;Dong Liu;T. Ma;K. Ozawa;T. Sakurai;Zheng Zhang;Qing Shen;S. Hayase
Liang Wang;Mengmeng Chen;Shuzhang Yang;Namiki Uezono;Qingqing Miao;G. Kapil;A. Baranwal;Y. Sanehira;Dandan Wang;Dong Liu;T. Ma;K. Ozawa;T. Sakurai;Zheng Zhang;Qing Shen;S. Hayase
中科院分区:
材料科学1区
文献类型:
--
作者:
Liang Wang;Mengmeng Chen;Shuzhang Yang;Namiki Uezono;Qingqing Miao;G. Kapil;A. Baranwal;Y. Sanehira;Dandan Wang;Dong Liu;T. Ma;K. Ozawa;T. Sakurai;Zheng Zhang;Qing Shen;S. Hayase

文献摘要

被引文献

相似文献

锡基钙钛矿太阳能电池(S-PSCs)是一种很有前途的替代有毒铅基PSCs的候选材料。为了促进其工业应用,开发不稳定的聚(3,4-乙二氧基噻吩基)聚苯乙烯磺酸盐(PEDOT:PSS)的无机取代物也是一个重要的部分,因为它具有内在的稳定性和低成本。在这里,我们用一种简单而快速的等离子体辅助方法(P-SnOx)原位制备了双极SnOx。所制备的P-SnOx体直接作为空穴传输层工作,其功率转换效率(PCE)为10.89±0.51%,与基于PEDOT:PSS的器件(10.39±0.72%)相当。由SnO2和锡金属组成的顶层SnOx(T-SnOx)通过将Sn4+还原为Sn2+作为钙钛矿的改性剂和保护层,获得了13.08±0.33%的器件性能。这种原位顶部保护策略与P-SnOxs作为空穴传输层相结合,进一步将S PSCs的冠军PCE提高到14.09%(13.5±0.32%)。
Sn-based perovskite solar cells (S-PSCs) are a promising candidate to replace toxic Pb-based PSCs. For promoting their industrial application, developing inorganic substitutions of unstable poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is also an important part due to its intrinsic stability and low cost. Here, we in situ prepared ambipolar SnOxby a simple and fast plasma-assistant strategy (P-SnOx). The as-prepared P-SnOxworks as a hole transport layer directly, yielding a 10.89 ± 0.51% power conversion efficiency (PCE) comparable to a PEDOT:PSS-based device (10.39 ± 0.72%). The top SnOx(T-SnOx), composed of SnO2and Sn metal, as a modifier and a protection layer of the perovskite by reducing Sn4+to Sn2+, gives a 13.08 ± 0.33% device performance. This in situ top protective strategy combined with P-SnOxas a hole transport layer further boosts the champion PCE of S-PSCs to 14.09% (13.5 ± 0.32%).