Thermal management with graphene lateral heat spreaders: A feasibility study
Thermal management with graphene lateral heat spreaders: A feasibility study
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DOI：
10.1109/itherm.2010.5501372
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发表时间：
2010-06
期刊：
影响因子：
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通讯作者：
S. Subrina;D. Kotchetkov;A. Balandin
中科院分区：
文献类型：
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作者：
S. Subrina;D. Kotchetkov;A. Balandin
在实验发现其极高的导热性之后，石墨烯被提议作为除热材料。为了评估石墨烯用于热管理的可行性，我们模拟了有和没有石墨烯或少层石墨烯（FLG）底层的硅绝缘体（SOI）结构中的热传播。使用时，石墨烯导热层夹在氧化层和硅衬底之间。石墨烯层的两端附着在侧面散热片上，形成侧面散热通道。采用COMSOL软件进行有限元模拟。假设石墨烯或FLG的导热系数在1000 W/mK到5000 W/mK之间。我们的模拟表明，对于给定的器件结构参数和许多晶体管，当石墨烯层嵌入芯片时，热点的最高温度降低了70 K。当晶体管数量增加时，石墨烯横向散热片的效果更加明显。研究结果表明，将石墨烯和FLG导热片结合到芯片设计中或用作热界面材料的填料，具有去除热点的潜力。
Following an experimental discovery of its extremely high thermal conductivity, graphene was proposed as material for heat removal. To evaluate the feasibility of graphene's use for thermal management we simulated heat propagation in siliconon- insulator (SOI) structures with and without graphene or few-layer graphene (FLG) underlayers. A graphene heat spreader layer, when used, was sandwiched between the oxide layer and the Si substrate. The two ends of the graphene layer were attached to the side heat sinks, thus forming the lateral channel for heat escape. The simulations were carried out with the finite element method using COMSOL software. The thermal conductivity of graphene or FLG was assumed to be within the range from 1000 W/mK to 5000 W/mK. Our simulations have shown that for a given set of parameters of the device structure and a number of transistors the maximum temperature in the hot spots decreased by 70 K when graphene layers were embedded in the chip. The effect of the graphene lateral heat spreaders was more pronounced when the number of transistors increased. The obtained results suggest that graphene and FLG heat spreaders have a potential for the hotspot removal while incorporated in the chip design or used as filler in the thermal interface materials.