High-sensitivity temperature sensing using an implanted single nitrogen-vacancy center array in diamond
High-sensitivity temperature sensing using an implanted single nitrogen-vacancy center array in diamond
复制标题
使用金刚石中植入的单氮空位中心阵列进行高灵敏度温度传感
DOI:
10.1103/physrevb.91.155404
复制
发表时间:
2015-04-06
影响因子:
3.7
通讯作者:
Wang, Guanzhong
中科院分区:
文献类型:
--
作者:
Wang, Junfeng;Feng, Fupan;Wang, Guanzhong
We presented a high-sensitivity temperature detection using an implanted single nitrogen-vacancy (NV) center array in diamond. The high-order thermal Carr-Purcell-Meiboom-Gill (TCPMG) method was performed on the implanted single NV center in diamond in a static magnetic field. We demonstrated that under small detunings for the two driving microwave frequencies, the oscillation frequency of the induced fluorescence of the NV center equals approximately the average of the detunings of the two driving fields. On the basis of the conclusion, the zero-field splitting D for the NV center and the corresponding temperature could be determined. The experiment showed that the coherence time for the high-order TCPMG was effectively extended, particularly up to 108 mu s for TCPMG-8, about 14 times the value 7.7 mu s for thermal Ramsey method. This coherence time corresponded to a thermal sensitivity of 10.1 mK/Hz(1/2). We also detected the temperature distribution on the surface of a diamond chip in three different circumstances by using the implanted NV center array with the TCPMG-3 method. The experiment implies the feasibility of using implanted NV centers in high-quality diamonds to detect temperatures in biology, chemistry, materials science, and microelectronic systems with high sensitivity and nanoscale resolution.