A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction
A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction
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基于外延Ga2O3/Ga:ZnO异质结的自供电深紫外光电探测器
DOI：
10.1039/c7tc01741c
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发表时间：
2017
影响因子：
6.4
通讯作者：
Tang Weihua
中科院分区：
文献类型：
--
作者：
Wu Zhenping;Jiao Lei;Wang Xiaolong;Guo Daoyou;Li Wenhao;Li Linghong;Huang Feng;Tang Weihua
从小巧、方便、节能的角度出发，下一代光电检测应用迫切需要一种能够独立于外部电源工作的深紫外光探测器(DUV PD)。本文采用激光分子束外延技术，通过引入晶格相容半导体Ga：ZnO，实现了高质量的β-Ga_2O_3/Ga：ZnO异质结深紫外光放电。该器件在254 nm光照下具有良好的波长选择性、高开关比、高DUV/可见光抑制比和高稳定性。基于在内建电场作用下耗尽区分离的光生电子-空穴对，讨论了产生这种现象的物理机制。我们的工作可能为进一步的高性能自给自足的DUV局部放电应用提供新的见解。
A deep-ultraviolet photodetector (DUV PD) which can function independently of an external power supply is urgently desired for the next-generation photodetection applications from the viewpoint of being diminutive, convenient, and power saving. In this work, by introducing a lattice compatible semiconductor Ga:ZnO, a high quality β-Ga2O3/Ga:ZnO heterojunction based DUV PD is achieved using laser molecular beam epitaxy. The obtained device could operate in a self-powered mode with an excellent wavelength selectivity, a high ON/OFF ratio, a high DUV/visible rejection ratio, and a high stability under 254 nm light illumination. The physical mechanism responsible for the observation is discussed based on the photogenerated electron–hole pairs separated in the depletion region under the built-in electric field. Our work may provide a new insight into further high performance self-sufficient DUV PD applications.