Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application.
Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application.
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DOI：
10.1364/oe.21.011448
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发表时间：
2013-05
期刊：
影响因子：
3.8
通讯作者：
Zhigang Zang;A. Nakamura;J. Temmyo
中科院分区：
文献类型：
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作者：
Zhigang Zang;A. Nakamura;J. Temmyo
本文研究了低温(500℃)下不同射频功率下氮气(N(2))等离子体自由基氧化合成氧化亚铜薄膜。X-射线衍射仪测量表明，合成的Cu2O薄膜是以(111)择优取向生长在c-蓝宝石衬底上的。当N(2)等离子体处理时间从0min增加到40min时，光学带隙能从1.69 eV增加到2.42 eV。尽管经过N(2)等离子体处理后，空穴密度从10(14)cm(-3)增加到10(15)cm(-3)，电阻率从1879Ωcm降低到780 Gbps cm，但与射频功率为0的Cu2O相比，Cu2O薄膜的性能要差一些。在射频功率为0W的Cu2O薄膜上制备的ZnO/Cu2O型太阳电池具有良好的整流性能，其效率为0.02%，开路电压为0.1V，填充因子为24%。
Cuprous oxide (Cu(2)O) films synthesis by radical oxidation with nitrogen (N(2)) plasma treatment and different RF power at low temperature (500 °C) are studied in this paper. X-ray diffraction measurements show that synthesized Cu(2)O thin films grow on c-sapphire substrate with preferred (111) orientation. With nitrogen (N(2)) plasma treatment, the optical bandgap energy is increased from 1.69 to 2.42 eV, when N(2) plasma treatment time is increased from 0 min to 40 min. Although the hole density is increased from 10(14) to 10(15) cm(-3) and the resistivity is decreased from 1879 to 780 Ω cm after N(2) plasma treatment, the performance of Cu(2)O films is poorer compared to that of Cu(2)O using RF power of 0. The fabricated ZnO/Cu(2)O solar cells based on Cu(2)O films with RF power of 0 W show a good rectifying behavior with a efficiency of 0.02%, an open-circuit voltage of 0.1 V, and a fill factor of 24%.