True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices
True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices
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DOI：
10.1109/jetcas.2015.2426492
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发表时间：
2015-06-01
影响因子：
4.6
通讯作者：
Ielmini, Daniele
中科院分区：
文献类型：
--
作者：
Balatti, Simone;Ambrogio, Stefano;Ielmini, Daniele
可扩展的低功耗随机数生成器（RNG）块对于当今通信系统中的加密至关重要。为了允许真正的RNG，系统必须显示一种内在随机的物理现象，例如随机电报噪声中的个体波动的定时或随机电报中的随机捕获/去捕获现象。在这项工作中，一个真正的RNG的基础上设置可变性的阻变存储器（RRAM）的证明。RNG依赖于单个RRAM器件，该器件在接近标称设置电压的恒定电压下重复编程。由于设置电压的统计可变性，设置转变仅发生在50%的施加脉冲中，从而导致电阻的双峰分布。模拟电阻的双峰分布最终通过CMOS反相器的数字再生转换为输出电压值的0/1分布。
Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.