Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures
Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures
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DOI：
10.1016/j.nimb.2016.11.017
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
王志光
中科院分区：
文献类型：
--
作者：
臧航;Weilin Jiang;柳文波;A. Devaraj;D.J. Edwards;C.H. Henager;R.J. Kurtz;李涛;贺朝会;恽迪;王志光
Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750 C with 120 keV He2+ and 4 MeV Kr15+.ions to 1017 and 4 1016 cm2, respectively. The Kr15+ ions penetrated the entire depth region of the He2+.ion implantation. Three areas of He2+, Kr15+ and He2+ + Kr15+ ion implanted SiC were created through.masked overlapping irradiation. The sample was subsequently annealed at 1600 C in vacuum and characterized.using cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy..Compared to the He2+ ion only implanted SiC, He cavities show a smaller size and higher.density in the co-implanted SiC. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promotes.cavity growth; much smaller voids are formed in the Kr15+ ion only irradiated SiC at the same dose..In addition, local Kr migration and trapping at cavities occurs, but long-range Kr diffusion in SiC is not.observed up to 1600 C.
