Mechanism of excitonic dephasing in layered InSe crystals
Mechanism of excitonic dephasing in layered InSe crystals
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DOI：
10.1103/physrevb.89.125128
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发表时间：
2014-03
影响因子：
3.7
通讯作者：
P. Dey;J. Paul;N. Glikin;Z. Kovalyuk;Z. Kudrynskyi;A. Romero;D. Karaiskaj
中科院分区：
文献类型：
--
作者：
P. Dey;J. Paul;N. Glikin;Z. Kovalyuk;Z. Kudrynskyi;A. Romero;D. Karaiskaj
（2013年11月12日接收; 2014年3月3日收到修订稿; 2014年3月31日出版）使用三脉冲，四波混频和二维傅里叶变换（2DFT）光谱仔细测量了InSe层状晶体中激子的退相和寿命。我们获得了这种层状材料中激子退相机制的详细图像。2DFT谱揭示了连续态相干激发的贡献，温度依赖性详细描述了声子-激子相互作用和均匀线宽的低温极限，激发密度依赖性揭示了激子-激子散射引起的激发诱导退相.随温度变化的均匀线宽主要由激子与113 cm的相互作用决定
(Received 12 November 2013; revised manuscript received 3 March 2014; published 31 March 2014)The dephasing and lifetime of excitons in InSe layered crystals are carefully measured using three-pulse,four-wave mixing and two-dimensional Fourier transform (2DFT) spectroscopy. We obtain a detailed pictureof the mechanism of excitonic dephasing in this layered material. The 2DFT spectra reveal contributionsfrom the coherent excitation of continuum states, whereas the temperature dependence provides a detaileddescription of the phonon-exciton interactions and the low temperature limit of the homogeneous linewidth.The excitation density dependence reveals excitation-induced dephasing due to exciton-exciton scattering. Thetemperature-dependent homogeneous linewidth is dominated by the interaction of excitons with the ∼113 cm